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RFMD公司生產高性能射頻IC，用于寬帶和電纜通訊領域。生產的產品包括功率放大器、線性放大器、LNA/混合器、求積調制器/解調器、上變頻器、前端設備、開關和收發器等。除了提供標準產品外，RFMD公司還為用戶設計定制產品。公司擁有兩座硅片工廠，其中包括全球最大的GaAsHBT生產廠。公司在美國有設五個設計中心。

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詳細描述,The RF3183 is a high power amplifier module with integrated power control. The input and output terminals are internally matched to 50?. The amplifier devices are manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (GaAs HBT) process. The module is designed to be the final amplification stage in a dual-mode GSM/EDGE mobile transmit lineup operating in the 824MHz to 915MHz (low) and 1710MHz to 1910MHz (high) bands (such as a cellular handset). Band selection is controlled by an input on the module which selects either the low or high band. The device is packaged on a 5mm x 5mm laminate module with a protective plastic over-mold. The RF3183 features RFMD’s latest integrated power flattening circuit, which significantly reduces current and power variation into load mismatch. The RF3183 provides excellent ESD protection at all the pins. The RF3183 also provides integrated V,RAMP, rejection filter which improves noise performance and transient spectrum.,特點,Typical GMSK Efficiency GSM850/900 48/53% DCS/PCS 50/53%,Auto VBATT Tracking Circuit avoids Switching Transients at Low?Supply Voltage,Integrated Power Flattening Circuit Reduces Power and Current into Mismatch,Integrated VRAMP Rejection Filter Eliminates External Components

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詳細描述,The RF7206 is a high-power, high-efficiency, linear power amplifier designed for use as the final RF amplifier in 3 V, 50 W W-CDMA mobile cellular equipment and spread-spectrum systems. This PA is developed for UMTS Band 2 which operates in the 1850 MHz to 1910 MHz frequency band. The RF7206 has two digital control pins to select one of three power modes to optimize performance and current drain at lower power levels. The part also has an integrated directional coupler which eliminates the need for an external discrete coupler at the output. The RF7206 is fully HSDPA-compliant and is assembled in a 10-pin, 3 mm x 3 mm module.,特點,HSDPA Compliant,Low Voltage Positive Bias Supply (3.0 V to 4.2 V),+28.5 dBm Linear Output Power (+27.0 dBm HSDPA),High Efficiency Operation39% at POUT = +28.5 dBm19% at POUT = +19.0 dBm (Without DC/DC Converter),Low Quiescent Current in Low Power Mode: 17 mA,Internal Voltage Regulator Eliminates the Need for External Reference Voltage (VREF),3-Mode Power States with Digital Control Interface,Supports DC/DC Converter Operation,Integrated Power Coupler,Integrated Blocking and Collector Decoupling Capacitors

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詳細描述,The RF3225 is a high-power, high-efficiency power amplifier module with integrated power control. This device is self-contained with 50Ω input and output terminals. The device is designed for use as the GMSK/EDGE power amplifier portion of the transmit chain in 2.5 and 3G transceivers supporting GMSK and/or Polar EDGE in GSM850, EGSM900, DCS, and PCS bands. The RF3225 high performance power amplifier module offers mobile handset designers a compact, easy-to-use, frontend component for quick integration into multimode, multi-band systems.,特點,EDGE Large Signal Polar Modulation Compatible,Power Margin for Flexible Tuning,GSM850 Efficiency: 54%,EGSM900 Efficiency: 56%,DCS1800 Efficiency: 49%,PCS1900 Efficiency: 51%,Low Harmonic Power,2.6A Current Limiter Reduces Peak Power and Current into VSWR,Low Switching Spectrum into VSWR,Industry Standard 5mmx5mm?Footprint,Simple Application Circuitry,Proven PowerStar? Architecture

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詳細描述,The RF7242 is a high-power, high-efficiency, linear power amplifier designed for use as the final RF amplifier in 3V, 50W WCDMA mobile cellular equipment and spread-spectrum systems. This PA is developed for UMTS Band 2 which operates in the 1850MHz to 1910MHz frequency band. The RF7242 has two digital control pins to select one of three power modes to optimize performance and current drain at lower power levels. The part also has an integrated directional coupler which eliminates the need for an external discrete coupler at the output. The RF7242 meets the spectral linearity requirements of High Speed Downlink Packet Access (HSDPA), High Speed Uplink Packet Access (HSUPA), and Long Term Evolution (LTE) data transmission and is assembled in a 10-pin, 3mm x 3mm module.,特點,HSDPA /HSUPA /HSPA+/LTE,Low Voltage Positive Bias Supply (3.0V to 4.2V),+28.5dBm Linear Output Power (+27.5dBm HSDPA and HSPA+),High Efficiency Operation47% at POUT = +28.5dBm,Low Quiescent Current in Low Power Mode: 5mA when using DC/Dc converter,Internal Voltage Regulator Eliminates the Need for External Reference Voltage (VREF),3-Mode Power States with Digital Control Interface,Optimized for DC/DC Converter Operation,Integrated Power Coupler,Integrated Blocking and Collector Decoupling Capacitors

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詳細描述, ,The RF3377 is a general purpose low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as an easily-cascadable 50 ohm gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000 MHz. The device is self-contained with 50 ohm input and output impedances and requires only two external DC-biasing elements to operate as specified.

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詳細描述, ,The RF3378 is a general purpose low-cost RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process and has been designed for use as an easily-cascadable 50 ohm gain block. Applications include IF and RF amplification in wireless voice and data communication products operating in frequency bands up to 6000 MHz. The device is self-contained with 50 ohm input and output impedances and requires only two external DC-biasing elements to operate as specified.

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詳細描述, ,The RF3827 is a general purpose, low-cost, high-linearity RF amplifier IC. The device is manufactured on a Gallium Arsenide process and is featured in a 3mm?x?3mm, 16-pin, QFN package. It is ideally suited for use as a linear/low noise amplifier, with OIP3 equal to 38dBm and noise figure less than 1.5dB., ,?,特點,For Use in Both 50Ω and 75Ω Systems,5MHz to 1500MHz Operation,Internally Matched Input and Output,20dB Small Signal Gain,1.2dB Noise Figure,+24dBm Output Power,Single 5V to 9V Positive Power Supply

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詳細描述, ,RFCA3302 is a high performance InGaP HBT MMIC amplifier designed to run from a single +5V supply without the need for an external dropping resistor. The high gain, high linearity and low distortion from 40MHz to 1008MHz make this part ideal for broadband cable applications. An integrated bias circuit provides stable gain over temperature and process variations. It is offered in a small SOT-89 package and is RoHS compliant.,特點,High Gain: 21dB,High Linearity and Low Distortion 38dBm IP3 -65dBc CSO -83dBc CTB,38dBm IP3,-65dBc CSO,-83dBc CTB,Single +5V Supply

最新賣價	包裝	應用	系列	電壓電源	工作溫度	封裝外殼

詳細描述,RFMD’s RFCA8818 is a low-noise, linear high performance GaAs MESFET MMIC Amplifier. The RFCA8818 contains two amplifiers for use in wideband push-pull CATV amplifiers requiring excellent second order performance. The second and third order non-linearities are greatly improved in the push-pull configuration.,特點,75? Push-Pull Amplifier,40MHz to 1008MHz Operation,Internally Matched Input and Output,17dB Small Signal Gain,2.0dB Noise Figure,Single 5V to 8V Positive Power Supply

最新賣價	包裝	應用	系列	電壓電源	工作溫度	封裝外殼

詳細描述,RFMD's RFDA0026 is a digital controlled variable gain amplifier featuring high linearity over the entire gain control range with noise figure less than 4.1dB in its maximum gain state. The gain of the 6-bit digital step attenuator is programmed with a serial mode control interface (SPI). The RFDA0026 is packaged in a small 6.0mm x 6.0mm leadless laminate MCM, which contains plated through thermal vias for ultra low thermal resistance. This module is easy to use with no external matching components required. , , Download RFMD’s Control Bit Generator Software ,特點,Frequency Range 700MHz to 1035MHz,Full Internal Matching and No?External Bias Inductors,6-Bit Digital Step Attenuator,SPI Serial Control Programming,Max Gain = 32dB at 900MHz,Gain Control Range = 31.5dB (0.5dB Step Size),High OIP3/P1dB = +40/23dBm,Single +5V Supply,Small 28-Pin, 6.0mm x 6.0mm, MCM,Power-up Programming

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