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RFMD公司生產高性能射頻IC，用于寬帶和電纜通訊領域。生產的產品包括功率放大器、線性放大器、LNA/混合器、求積調制器/解調器、上變頻器、前端設備、開關和收發器等。除了提供標準產品外，RFMD公司還為用戶設計定制產品。公司擁有兩座硅片工廠，其中包括全球最大的GaAsHBT生產廠。公司在美國有設五個設計中心。

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詳細描述, ,The RFHA1020 is a 50V 280W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency, and flat gain over a broad frequency range in a single package. The RFHA1020 is a matched power transistor packaged in a hermetic, flanged ceramic package. The package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier.,特點,Wideband Operation: 1.2GHz to 1.4GHz,Advanced GaN HEMT Technology,Advanced Heat-Sink Technology,Supports Multiple Pulse Conditions 10% to 20% Duty Cycle 100μs to 1ms Pulse Width,10% to 20% Duty Cycle,100μs to 1ms Pulse Width,Integrated Matching Components for High Terminal Impedances,50V Operation Typical Performance: Output Pulsed Power: 280W Pulse Width: 100μs, Duty Cycle 10% Small Signal Gain: 15dB High Efficiency (55%) - 40°C to 85°C Operating Temperature,Output Pulsed Power: 280W,Pulse Width: 100μs, Duty Cycle 10%,Small Signal Gain: 15dB,High Efficiency (55%),- 40°C to 85°C Operating Temperature

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詳細描述,RFMD’s SGC4463Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC4463Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SGC4463Z is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50Ω.,特點,Single Fixed 3V Supply,No Dropping Resistor Required,Patented Self-Bias Circuitry,P1dB = 12.9dBm at 1950MHz,OIP3 = 27dBm at 1950MHz,Robust 1000V ESD, Class 1C HBM

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詳細描述,RFMD’s SGC4563Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC4563Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SGC4563Z is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50Ω,特點,Single Fixed 3V Supply,No Dropping Resistor Required,Patented Self-Bias Circuitry,P1dB=15.6dBm at 1950MHz,OIP3=28.5dBm at 1950MHz,Robust 1000V ESD, Class 1C HBM

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詳細描述,The RFPA1012 is a GaAs HBT linear power amplifier specifically designed for wireless infrastructure applications. Using a highly reliable GaAs HBT fabrication process, this high performance single-stage amplifier achieves ultra-high linearity over a broad frequency range. It also offers low noise figure making it an excellent solution for 2nd and 3rd stage LNAs.,特點,High Linearity: OIP3?=?44dBm at 900MHz,Low Noise: NF?=?3.5dB at 900MHz,Low DC Power: 5V, 90mA,400MHz to 2700MHz Operation

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詳細描述,The SZA-5044 is a high efficiency 4.9-5.9 GHz class AB Heterojunction Bipolar Transistor (HBT) power amplifier housed in a low-cost surface mountable plastic package. This HBT amplifier is made with InGaP on GaAs device technology and is fabricated with MOCVD for an ideal combination of low cost and high reliability. This device is specifically designed as a final or driver stage for 802.11a equipment in the 4.9-5.9 GHz band, operating from a 5V supply. Optimized on-chip impedance matching circuitry provides a 50 ohm nominal RF input impedance. A single external output matching circuit covers the entire 4.9-5.9 GHz band simultaneously. The external RF output match and bias adjustability allows load line optimization for other applications or optimized performance over other bands. It features an output power detector, on/off power control, and high RF overdrive robustness.,特點,P1dB = 29 dBm,Simultaneous 4.9 - 5.9 GHz performance,Output Return Loss < -11 dB,On chip output power detector,802.11a Pout = 21.5 dBm @ 3% EVM,Single Supply Voltage = 5V

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詳細描述,The SZM-2066Z is a high linearity 2.4-2.7 GHz 2W Class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface mountable plastic Q-FlexN multi-chip module package. This HBT amplifier is made with InGaP on GaAs device technology and is fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a final or driver stage for 802.11b/g and 802.16 equipment in the 2.4-2.7 GHz bands, and it can operate with a 3V to 5V supply. The external RF output match and bias adjustability allows load line optimization for other applications over narrower bands. It features an output power detector, on/off power control, and high RF overdrive robustness.,特點,P1dB = 33.5dBm @ 5V,High Gain: 37dB,Linear Class AB Performance,Po = +26 dBm @ 2.5% EVM, Typ,Active Bias with Adjustable Current,On-chip Output Power Detector,Low Thermal Resistance,Power Supply Range = 3V to 5V

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詳細描述,RFMD’s portfolio of leading edge products for WiMAX applications is enhanced with the introduction of the new SZM-3166Z high linearity 3.3-3.6 GHz 2W power amplifier. Produced in InGaP HBT technology the SZM-3166Z offers a cost effective solution to more expensive FET based solutions. With only 7.5 dB of backoff from P1dB the SZM-3166Z provides a full 1/2 watt of linear power @ 2.5% EVM while the output stage provides 15% efficiency. RFMD's SZM-3166Z is housed in a low cost 6x6 QFN package and boasts an ESD rating of class 1C.,特點,High gain accommodates all Tx/Rx chip sets,+27 dBm linear power for OFDM modulation,Active bias with adjustable Iq current,Flexible power up / down control for each gain stage,On chip power detector,Robust ESD Rating = Class 1C (1000V HBM

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詳細描述,The SZP-3026Z is a high linearity 3.0GHz to 3.8GHz 2W single stage Class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a proprietary surface-mountable plastic encapsulated package. The HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a flexible final or driver stage for 802.16 WiMAX equipment in the 3.0GHz to 3.8GHz bands, and it can operate from a 3V to 6V supply. It is prematched to approximately 5? on the input for broadband performance and ease of matching at the board level. It features an output power detector, on/off power control, ESD protection, excellent overall robustness, and a proprietary hand reworkable and thermally enhanced SOF-26 package.,特點,POUT = +26dBm at 2.5% EVM,P1dB = 33.2dBm,Gain = 12.0dB,Thermally enhanced proprietary SOF-26 package,On chip output power detector,Robust 1000V ESD, Class 1C,Power Supply Range = 3V to 6V

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詳細描述,The SZP-5026Z is a high linearity 4.9GHz to 5.9GHz 2W single stage Class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a proprietary surface-mountable plastic encapsulated package. The HBT amplifier is made with InGaP on GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed as a flexible final or driver stage for 802.16 equipment in the 4.9GHz to 5.9GHz bands, and it can operate from a 3V to 5V supply. It is internally prematched on the input and output for broadband performance and ease of matching at the board level. It features an input power detector, on/off power control, ESD protection, excellent overall robustness, and a proprietary hand reworkable and thermally enhanced SOF-26 package. ,特點,P1dB = 33dBm?at 5V,802.11a 54Mb/s Class AB Performance POUT = 25.5dBm?at 2.5% EVM, 5.9GHz,VCC 5V, 680mA,On-chip Input Power Detector,Internally Prematched Input and Output,Proprietary Low Thermal Resistance Package,Power Up/Down Control <1μs

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