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RFMD公司生產高性能射頻IC，用于寬帶和電纜通訊領域。生產的產品包括功率放大器、線性放大器、LNA/混合器、求積調制器/解調器、上變頻器、前端設備、開關和收發器等。除了提供標準產品外，RFMD公司還為用戶設計定制產品。公司擁有兩座硅片工廠，其中包括全球最大的GaAsHBT生產廠。公司在美國有設五個設計中心。

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詳細描述, ,The RFGA2012 is specifically designed to achieve high OIP3 with minimal DC power. Ultra-linear performance has been demonstated in standard frequency bands within 150MHz to 3GHz. The RFGA2012 features a VBIAS pin that allows users to optimize the quiescent current for specific requirements. The VBIAS pin also serves as a power-down pin. The RFGA2012 offers 1000V HBM ESD ruggedness and is manufactured using RFMD's InGaP HBT process to minimize Beta process variation.,特點,High OIP3?=?35dBm at 1960MHz,Low DC Power: 3.3V, 23mA,Low NF = 1.6dB at 1960MHz,50MHz to 3000MHz Operation,Power Down Capability,Class 1C (1000V) HBM ESD Rating,MSL 1 Rating,Common Platform Compatible

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詳細描述, ,The RFHA1020 is a 50V 280W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency, and flat gain over a broad frequency range in a single package. The RFHA1020 is a matched power transistor packaged in a hermetic, flanged ceramic package. The package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier.,特點,Wideband Operation: 1.2GHz to 1.4GHz,Advanced GaN HEMT Technology,Advanced Heat-Sink Technology,Supports Multiple Pulse Conditions 10% to 20% Duty Cycle 100μs to 1ms Pulse Width,10% to 20% Duty Cycle,100μs to 1ms Pulse Width,Integrated Matching Components for High Terminal Impedances,50V Operation Typical Performance: Output Pulsed Power: 280W Pulse Width: 100μs, Duty Cycle 10% Small Signal Gain: 15dB High Efficiency (55%) - 40°C to 85°C Operating Temperature,Output Pulsed Power: 280W,Pulse Width: 100μs, Duty Cycle 10%,Small Signal Gain: 15dB,High Efficiency (55%),- 40°C to 85°C Operating Temperature

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詳細描述,The SGA4463Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特點,High Gain: 17dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

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詳細描述,The SGA5389Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特點,High Gain: 15.4dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

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詳細描述,The SGA5586Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation. ,特點,High Gain: 18.7dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

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詳細描述,RFMD’s SGC4463Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC4463Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SGC4463Z is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50Ω.,特點,Single Fixed 3V Supply,No Dropping Resistor Required,Patented Self-Bias Circuitry,P1dB = 12.9dBm at 1950MHz,OIP3 = 27dBm at 1950MHz,Robust 1000V ESD, Class 1C HBM

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詳細描述,RFMD’s portfolio of leading edge products for WiMAX applications is enhanced with the introduction of the new SZM-3166Z high linearity 3.3-3.6 GHz 2W power amplifier. Produced in InGaP HBT technology the SZM-3166Z offers a cost effective solution to more expensive FET based solutions. With only 7.5 dB of backoff from P1dB the SZM-3166Z provides a full 1/2 watt of linear power @ 2.5% EVM while the output stage provides 15% efficiency. RFMD's SZM-3166Z is housed in a low cost 6x6 QFN package and boasts an ESD rating of class 1C.,特點,High gain accommodates all Tx/Rx chip sets,+27 dBm linear power for OFDM modulation,Active bias with adjustable Iq current,Flexible power up / down control for each gain stage,On chip power detector,Robust ESD Rating = Class 1C (1000V HBM

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詳細描述,The RF2059 is a low power, high performance, wideband RF frequency conversion chip with integrated local oscillator (LO) generation and a pair of RF mixers. The RF synthesizer includes an integrated fractional-N phase locked loop with voltage controlled oscillator (VCO) and dividers to produce a low-phase noise LO signal with a very fine frequency resolution. The buffered LO output drives the built-in RF mixers which convert the signal into the required frequency band. The mixer bias current can be programmed dependent on the required performance and available supply current. The VCO has been designed to cover the frequency range from 1550 MHz to 2050 MHz. The LO dividers can be selected to divide the VCO output frequency by two or four to give lower LO frequencies. The RF mixers are very broad band and operate from 30 MHz to 2500 MHz at the input and output, enabling both up and down conversion. An external crystal of between 10 MHz and 52 MHz or an external reference source of between 10 MHz and 104 MHz can be used with the RF2059 to accommodate a variety of reference frequency options.,The high level of integration makes the RF2059 ideal for WLAN band shifting applications, offering a low cost and compact single chip solution.,All on-chip registers are controlled through a simple three-wire serial interface. The RF2059 is designed for 2.7 V to 3.6 V operation for compatibility with portable, battery powered devices. It is available in a plastic 32-pin, 5 mm x 5 mm QFN package.,特點,1550 MHz to 2050 MHz VCO? Frequency Range,30 MHz to 2.5 GHz Mixer?Frequency Range,Fractional-N Synthesizer,Low Phase Noise VCO,On-Chip Crystal-Sustaining Circuit With Programmable Loading Capacitors,Two High-Linearity RF Mixers,Integrated LO Buffers and Dividers,Mixer Input IP3 +18 dBm,Mixer Bias Adjustable for Low Power Operation,Full Duplex Mode,2.7 V to 3.6 V Power Supply,Low Current Consumption 55 mA to 75 mA at 3 V,3-Wire Serial Interface

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