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QORVO/RFMD

RFMD公司生產(chǎn)高性能射頻IC，用于寬帶和電纜通訊領(lǐng)域。生產(chǎn)的產(chǎn)品包括功率放大器、線性放大器、LNA/混合器、求積調(diào)制器/解調(diào)器、上變頻器、前端設(shè)備、開關(guān)和收發(fā)器等。除了提供標(biāo)準(zhǔn)產(chǎn)品外，RFMD公司還為用戶設(shè)計(jì)定制產(chǎn)品。公司擁有兩座硅片工廠，其中包括全球最大的GaAsHBT生產(chǎn)廠。公司在美國有設(shè)五個(gè)設(shè)計(jì)中心。
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RFG1M20090PCBA-410
型號：
RFG1M20090PCBA-410
品牌：
QORVO/RFMD
產(chǎn)品分類：
RF放大器
描述：
詳細(xì)描述, ,The RFG1M20090 is optimized for commercial infrastructure, military communication and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, ideal for constant envelope, pulsed and WCDMA and LTE applications. Using an advanced 48V high power density Gallium Nitride (GaN) semiconductor process optimized for high peak to average ratio applications, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RFG1M20090 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain, efficiency, and linearizable performance in a single amplifier.,特點(diǎn),Advanced GaN HEMT Technology,Peak Modulated Power > 90W,Advanced Heat-Sink Technology,Single Circuit for 1.9GHz to 2.2GHz?,48V Operation Typical Performance POUT = 44dBm Gain = 14.5dB Drain Efficiency = 35% ACP = -35dBc Linearizable to -55dBc with DPD,POUT = 44dBm,Gain = 14.5dB,Drain Efficiency = 35%,ACP = -35dBc,Linearizable to -55dBc with DPD,-25°C to 85°C Operating Temperature,Optimized for Video Bandwidth and Minimized Memory Effects,RF Tested for 3GPP Performance,RF Tested for Peak Power Using IS95,Large Signal Models Available
RFG1M20180PCBA-410
型號：
RFG1M20180PCBA-410
品牌：
QORVO/RFMD
產(chǎn)品分類：
RF放大器
描述：
詳細(xì)描述, ,The RFG1M20180 is optimized for commercial infrastructure, military communication and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, and is ideal for constant envelope, pulsed, WCDMA, and LTE applications. Using an advanced 48V high power density Gallium Nitride (GaN) semiconductor process optimized for high peak to average ratio applications, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RFG1M20180 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain, efficiency, and linearizable performance in a single amplifier.,特點(diǎn),Advance GaN HEMT technology,Typical peak modulated power >180W,Advanced heat-sink technology,Single circuit for 1.8GHz to 2.2GHz,48V operation typical performance: POUT = 46.5dBm Gain = 14.6dB Drain Efficiency = 33% ACP = -36dBc Linearizable to -55dBc with DPD,POUT = 46.5dBm,Gain = 14.6dB,Drain Efficiency = 33%,ACP = -36dBc,Linearizable to -55dBc with DPD,-25°C to 85°C operating temperature,Optimized for video bandwidth and minimized memory effects,RF tested for 3GPP performance,RF tested for peak power using IS95,Large signal models available
RFHA1020PCBA-410
型號：
RFHA1020PCBA-410
品牌：
QORVO/RFMD
產(chǎn)品分類：
RF放大器
描述：
詳細(xì)描述, ,The RFHA1020 is a 50V 280W high power discrete amplifier designed for L-Band pulsed radar, air traffic control and surveillance and general purpose broadband amplifier applications. Using an advanced high power density Gallium Nitride (GaN) semiconductor process, these high performance amplifiers achieve high output power, high efficiency, and flat gain over a broad frequency range in a single package. The RFHA1020 is a matched power transistor packaged in a hermetic, flanged ceramic package. The package provides excellent thermal stability through the use of advanced heat sink and power dissipation technologies. Ease of integration is accomplished through the incorporation of single, optimized matching networks that provide wideband gain and power performance in a single amplifier.,特點(diǎn),Wideband Operation: 1.2GHz to 1.4GHz,Advanced GaN HEMT Technology,Advanced Heat-Sink Technology,Supports Multiple Pulse Conditions 10% to 20% Duty Cycle 100μs to 1ms Pulse Width,10% to 20% Duty Cycle,100μs to 1ms Pulse Width,Integrated Matching Components for High Terminal Impedances,50V Operation Typical Performance: Output Pulsed Power: 280W Pulse Width: 100μs, Duty Cycle 10% Small Signal Gain: 15dB High Efficiency (55%) - 40°C to 85°C Operating Temperature,Output Pulsed Power: 280W,Pulse Width: 100μs, Duty Cycle 10%,Small Signal Gain: 15dB,High Efficiency (55%),- 40°C to 85°C Operating Temperature
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