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QORVO/RFMD

RFMD公司生產高性能射頻IC,用于寬帶和電纜通訊領域。生產的產品包括功率放大器、線性放大器、LNA/混合器、求積調制器/解調器、上變頻器、前端設備、開關和收發器等。除了提供標準產品外,RFMD公司還為用戶設計定制產品。公司擁有兩座硅片工廠,其中包括全球最大的GaAsHBT生產廠。公司在美國有設五個設計中心。
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RFMD2081SR
型號:
RFMD2081SR
品牌:
QORVO/RFMD
產品分類:
調制解調器
描述:
詳細描述,The RFMD2081 is a low power, wideband, IQ modulator with integrated fractional-N synthesizer and voltage controlled oscillator (VCO). The modulator features an input 3dB bandwidth of 100MHz, and can generate output frequencies of between 45MHz and 2700MHz, making it suitable for a wide range of applications., ,The fractional-N synthesizer takes advantage of an advanced sigma-delta architecture that delivers ultra-fine step sizes and low spurious products. The synthesizer/VCO, combined with an external loop filter, allows the user to generate local oscillator (LO) signals from 90MHz to 5400MHz. The LO signal is buffered and routed to a high accuracy quadrature divider (/2) that drives the balanced I and Q mixers. The output of the mixers are summed and applied to a differential RF output stage. This device also features a differential input for an external VCO or LO source., ,Device programming is achieved via a simple 3-wire serial interface. In addition, a unique programming mode allows up to four devices to be controlled from a common serial bus. This eliminates the need for separate chip-select control lines between each device and the host controller. Up to six general purpose outputs are provided, which can be used to access internal signals (the LOCK signal, for example) or to control front end components. The device is optimized for low power operation, consuming typically only 135mA from a 3V supply. ,特點,RF Output Frequency Range 45MHz to 2700MHz,Fractional-N Synthesizer with Very Low Spurious Levels,Typical Step Size 1.5Hz,Fully Integrated Wideband VCOs and LO Buffers,Integrated Phase Noise <0.2° rms at 1GHz,-40dBc Unadjusted Carrier Suppression,-40dBc Unadjusted Sideband Suppression,100MHz Baseband Input 3dB Bandwidth,Very Low Noise Floor -162dBm/Hz Typical,Output P1dB +4dBm,Output IP3 +17dBm,2.7V to 3.3V Power Supply,135mA Typical Current Consumption,Serial Programming Interface
RFG1M20090PCBA-410
型號:
RFG1M20090PCBA-410
品牌:
QORVO/RFMD
產品分類:
RF放大器
描述:
詳細描述, ,The RFG1M20090 is optimized for commercial infrastructure, military communication and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, ideal for constant envelope, pulsed and WCDMA and LTE applications. Using an advanced 48V high power density Gallium Nitride (GaN) semiconductor process optimized for high peak to average ratio applications, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RFG1M20090 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain, efficiency, and linearizable performance in a single amplifier.,特點,Advanced GaN HEMT Technology,Peak Modulated Power > 90W,Advanced Heat-Sink Technology,Single Circuit for 1.9GHz to 2.2GHz?,48V Operation Typical Performance POUT = 44dBm Gain = 14.5dB Drain Efficiency = 35% ACP = -35dBc Linearizable to -55dBc with DPD,POUT = 44dBm,Gain = 14.5dB,Drain Efficiency = 35%,ACP = -35dBc,Linearizable to -55dBc with DPD,-25°C to 85°C Operating Temperature,Optimized for Video Bandwidth and Minimized Memory Effects,RF Tested for 3GPP Performance,RF Tested for Peak Power Using IS95,Large Signal Models Available
RFG1M20180PCBA-410
型號:
RFG1M20180PCBA-410
品牌:
QORVO/RFMD
產品分類:
RF放大器
描述:
詳細描述, ,The RFG1M20180 is optimized for commercial infrastructure, military communication and general purpose amplifier applications in the 1.8GHz to 2.2GHz frequency band, and is ideal for constant envelope, pulsed, WCDMA, and LTE applications. Using an advanced 48V high power density Gallium Nitride (GaN) semiconductor process optimized for high peak to average ratio applications, these high-performance amplifiers achieve high efficiency and flat gain over a broad frequency range in a single amplifier design. The RFG1M20180 is an input matched GaN transistor packaged in an air cavity ceramic package which provides excellent thermal stability. Ease of integration is accomplished through the incorporation of simple, optimized matching networks external to the package that provide wideband gain, efficiency, and linearizable performance in a single amplifier.,特點,Advance GaN HEMT technology,Typical peak modulated power >180W,Advanced heat-sink technology,Single circuit for 1.8GHz to 2.2GHz,48V operation typical performance: POUT = 46.5dBm Gain = 14.6dB Drain Efficiency = 33% ACP = -36dBc Linearizable to -55dBc with DPD,POUT = 46.5dBm,Gain = 14.6dB,Drain Efficiency = 33%,ACP = -36dBc,Linearizable to -55dBc with DPD,-25°C to 85°C operating temperature,Optimized for video bandwidth and minimized memory effects,RF tested for 3GPP performance,RF tested for peak power using IS95,Large signal models available
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