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RFMD公司生產高性能射頻IC，用于寬帶和電纜通訊領域。生產的產品包括功率放大器、線性放大器、LNA/混合器、求積調制器/解調器、上變頻器、前端設備、開關和收發器等。除了提供標準產品外，RFMD公司還為用戶設計定制產品。公司擁有兩座硅片工廠，其中包括全球最大的GaAsHBT生產廠。公司在美國有設五個設計中心。

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詳細描述,The RF7234 is a high-power, high-efficiency, linear power amplifier designed for use as the final RF amplifier in 3V, 50Ω TD-SCDMA mobile cellular equipment and spread-spectrum systems. This PA is developed for TD-SCDMA 1880MHz to 1920MHz and 2010MHz to 2025MHz frequency band, plus W-CDMA Band 1. The RF7234 has two digital control pins to select one of three power modes to optimize performance and current drain at lower power levels. The part also has an integrated directional coupler which eliminates the need for an external discrete coupler at the output. The RF7234 is fully TD-SCDMA/W-CDMA/HSDPA-compliant and is assembled in a 10-pin, 3mmx3mm module.,特點,TD-SCDMA and HSDPA Compliant,Low Voltage Positive Bias Supply (3.4V to 4.2V),+28dBm Linear Output Power W-CDMA (+26.5dBm HSDPA),+27.5dBm Output Power TD-SCDMA,High Efficiency Operation 35% at POUT=+27.5dBm (TD-SCDMA),20% at POUT=+19.0dBm (Without DC/DC Converter),Low Quiescent Current in Low Power Mode: 17mA,Internal Voltage Regulator Eliminates the Need for External Reference Voltage (VREF),3-Mode Power States with Digital Control Interface,Supports DC/DC Converter Operation,Integrated Power Coupler,Integrated Blocking and Collector Decoupling Capacitors

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詳細描述,RFMD’s SGC2363Z is a high performance SiGe HBT MMIC amplifier utilizing a Darlington configuration with a patented active-bias network. The active bias network provides stable current over temperature and process Beta variations. Designed to run directly from a 3V supply, the SGC2363Z does not require a dropping resistor as compared to typical Darlington amplifiers. The SGC2363Z is designed for high linearity 3V gain block applications that require small size and minimal external components. It is internally matched to 50Ω. ,特點,Single, Fixed 3V Supply,No Dropping Resistor Required,Patented Self-Bias Circuitry,P1dB = 10.1dBm at 1950MHz,OIP3 = 23dBm at 1950MHz,Robust 1000V ESD, Class 1C HBM

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詳細描述,The RF5632 is a linear power amplifier IC designed specifically for WiMAX final or driver stage applications. The device is manufactured on an advanced InGaP Heterojunction Bipolar Transistor (HBT) process and is provided in a leadless chip carrier with a backside ground. The RF5632 is designed to maintain linearity over a wide range of temperatures and power outputs. The external match offers tunability for output power over multiple bands. RF5632 features internal input and interstage match power down mode and dual power detectors.,特點,Single 5.0V Power Supply,36dB Small Signal Gain,Supports Low Gain Mode,2.5% EVM WiMAX +28dBm 5.0V,Single Output Power Detector,Multiple Frequency Ranges,High Efficiency

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詳細描述, ,The RF5643 is a linear power amplifier IC designed specifically for WiMAX final or driver stage applications. This product is an MCM Power Amplifier intently specified to address 700MHz to 3.8GHz WiMAX systems. The device is provided in a leadless chip carrier with a backside ground. The RF5643 is designed to maintain linearity over a wide range of temperatures and power outputs. The external match offers tunability for output power over multiple bands.,特點,11dB Small Signal Gain (Typ.),Supports Low Gain Mode,3% EVM WiMAX +30dBm, 6.0V,Single Output Power Detectors,Multiple Frequency Ranges,High Efficiency

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詳細描述, ,The RF5652 is a High Power Amplifier that is intently specified to address IEEE 802.11b/g/n WiFi 2.4?GHz to 2.5?GHz customer premises equipment (CPE) applications; and WiMAX (2.5?GHz to 2.7GHz) CPE applications. The PA has a intergrated 3-stage Linear Power Amplier, with 30?dBm (1 Watt) linear power at PA output. This product will be housed in an 5?mm?x?5?mm QFN. ,特點,Single Supply Voltage 5.0?V,37?dB Typical Gain Across Frequency Band,POUT = 30?dBm?3?% EVM,2.4?GHz to 2.7?GHz Frequency Range,Integrated 3-stage PA

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詳細描述,The RF6281 is a high-power high-efficiency linear amplifier module specifically designed for 3V handheld systems. This amplifier uses a balanced architecture?which makes the PA load insensitive and therefore eliminates the need for an isolator. The device is manufactured on an advanced eighth generation GaAs HBT process and was designed for use as the final RF amplifier in 3V UMTS handheld digital cellular equipment spreadspectrum systems and other applications in the 1710MHz to 1980MHz band? (Bands I II III IV IX). The RF6281 has an analog bias control pin to reduce idle? current at low power levels. The RF6281 is assembled in 16-pin 4mm x 4mm laminate package.,特點,?Multiple Band Coverage (Bands I II III IV IX),?Input/Output Internally Matched at 50Ω,?27dBm Linear Output Power(HSDPA),?35% Peak Linear Efficiency (ULRMC 12.2Kbps),?24% Linear Efficiency at 16dBm,?-40dBc ACLR?at ±5MHz,?Analog Bias Control,?Load Insensitive

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詳細描述, ,The RF6559 front end module is intended for use in 915MHz AMR solutions. The RF6559 addresses the need for aggressive size reduction for a typical 915MHz AMR front end design and greatly reduces the number of components outside the RF6559 thus minimizing the footprint and assembly cost of the overall solution. The RF6559 contains an integrated three stage Power Amplifier which provides 42dB of Gain and typical Power output of 28dBm. The RF6559 allows for Tx/Rx on a single Antenna via the 2 integrated SPDT switches. Tx filtering, built in Power Detector and a two stage LNA which provides a typical 32dB of Gain round out the inside of this module. All the functionality ofthe RF6559 is packaged in a 28-pin, 6mm?x?6mm laminate package with backside ground. Greatly minimizes next level board space and allows for simplified integration. ,特點,Tx Output Power: 28dBm,Tx Gain: 42dB,Integrated Single Port Rx/Tx 50? Bi-directional Transceiver Interface,LNA with Bypass Mode

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詳細描述,The SGA4563Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特點,High Gain: 20.2dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

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詳細描述,The SGA5386Z is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration featuring one-micron emitters provides high F,T, and excellent thermal performance. The heterojunction increases breakdown voltage and minimizes leakage current between junctions. Cancellation of emitter junction non-linearities results in higher suppression of intermodulation products. Only two DC-blocking capacitors, a bias resistor, and an optional RF choke are required for operation.,特點,High Gain: 14.9dB at 1950MHz,Cascadable 50Ω,Operates from Single Supply,Low Thermal Resistance Package

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